期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 49, 期 3, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.49.031201
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资金
- National Science Council [NSC 98-2112-M-007-019-MY3]
We have investigated the temperature, T, dependence of a highly sensitive far-infrared (FIR) photodetector fabricated on a two-dimensional electron gas system in GaAs/AlGaAs heterostructures. The photoinduced resistance change, Delta R(xx), observed in different integer quantum Hall (QH) regimes shows different T dependences. At high T, Delta R(xx) is limited by the vanishing of rising electronic temperature Delta T(e). For T < 5 K, Delta R(xx) can either rapidly increase with lower T or slowly diminish, determined by the interplay between the magnetic field dependence of Delta T(e) and the T dependence of QH states. (C) 2010 The Japan Society of Applied Physics
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