期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 48, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.48.03A065
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资金
- Engineering and Physical Sciences Research Council [EP/C511786/1] Funding Source: researchfish
In this article we review the concept of electron-beam-addressed high density phase-change nanoparticle memory, where information is written in the phase state of gallium nanoparticles by electron beam excitation, and read-out via measurements of cathodoluminescent emission. The high spatial resolution provided by a focused electron beam, far below the optical diffraction limit, offers the possibility of addressing individual nanoparticles within a close-packed array, thereby enabling a new conceptual basis for high density phase-change memory. (C) 2009 The Japan Society of Applied Physics
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