期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 48, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.48.06FD08
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We performed electrical transport measurements on a DNA-conjugated single-wall carbon nanotube (SWCNT) field-effect transistor (FET) at various temperatures (Ts). At T = 300 K, the gate action of the SWCNT FET clearly exhibited n-type behavior, while the bare SWCNT FET showed usual p-type characteristics. The value of the drain current measured from the DNA-conjugated SWCNT FET decreased rapidly with the decrease of T. We fit the T-dependence of the DNA-conjugated SWCNT FET with a simple back-to-back Schottky diode model and found a slight decrease of Phi(B) with decreasing T. A possible explanation for the type conversion is the chemical modification of the CNT surface as a result of the conjugation process. (C) 2009 The Japan Society of Applied Physics
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