Interfacial and Electrical Characterization in Metal-Oxide-Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric

Metal-oxide-semiconductor capacitors (MOSCs) and MOS field-effect transistors (MOSFETs) incorporating cerium dioxide (CeO2) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements. The density of interface trap per unit area (N-it), the density of interface trap per unit area and energy (D-it), the energy distribution of interface trap density, and the effective capture cross section (sigma(s)) were studied in details. Experimental results showed that the N-it, D-it, and sigma(s) were about 3.4 x 10(10) cm(-1), 7.3 x 10(10) cm(-2) eV(-1), and 9.0 x 10(-11) cm(2), respectively. In addition, a comparison of interfacial properties among several gate dielectrics was made. (C) 2009 The Japan Society of Applied Physics