4.3 Article

Single-Electron-Resolution Electrometer Based on Field-Effect Transistor

期刊

JAPANESE JOURNAL OF APPLIED PHYSICS
卷 47, 期 11, 页码 8305-8310

出版社

IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.8305

关键词

single electron; electrometer; high charge sensitivity; Si field-effect transistor

资金

  1. Japan Society for the Promotion of Science [20241036, 19310093]
  2. Grants-in-Aid for Scientific Research [19310093] Funding Source: KAKEN

向作者/读者索取更多资源

An electrometer based oil field-effect transistors (FETs) wits fabricated oil a silicon-on-insulator substrate (SOI), The electrometer has a nanometer-scale small channel and a capacitively coupled node, where single electrons are stored. We discuss the dependence of the charge sensitivity of the electrometer on its structure and on its operation condition and gives guides for achieving the higher charge sensitivity. The device optimization based on this dependence allows the demonstration of the electrometer with extremely high charge sensitivity. 0.0013 e/root Hz at 1 Hz, at room temperature.

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