期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 47, 期 11, 页码 8305-8310出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.8305
关键词
single electron; electrometer; high charge sensitivity; Si field-effect transistor
资金
- Japan Society for the Promotion of Science [20241036, 19310093]
- Grants-in-Aid for Scientific Research [19310093] Funding Source: KAKEN
An electrometer based oil field-effect transistors (FETs) wits fabricated oil a silicon-on-insulator substrate (SOI), The electrometer has a nanometer-scale small channel and a capacitively coupled node, where single electrons are stored. We discuss the dependence of the charge sensitivity of the electrometer on its structure and on its operation condition and gives guides for achieving the higher charge sensitivity. The device optimization based on this dependence allows the demonstration of the electrometer with extremely high charge sensitivity. 0.0013 e/root Hz at 1 Hz, at room temperature.
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