期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 47, 期 6, 页码 5083-5085出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.5083
关键词
organic memory device; flat-band voltage; C-60; PVP; C-V hysteresis
Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing fullerene (C-60) were formed by a spin coating method. Atomic force microscopy (AFM) images showed that the surface of the PVP layer containing C-60 was uniform. Capacitance-voltage (C-V) measurements on Al/C-60 embedded in PVP layer/p-Si(100) devices at room temperature showed a hysteresis with a large flat-band voltage shift due to the existence Of C-60 molecules, indicative of the charge storage in the C-60 molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C-60 increased with increasing C-60 concentration.
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