期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 47, 期 6, 页码 4630-4633出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.47.4630
关键词
SiGe; molecular beam epitaxy; Hall measurements; defect
The Ge composition dependence of the densities and energy levels of the acceptorlike defect states that are generated during the solid-source molecular beam epitaxy (SSMBE) of SiGe films was investigated. Hall measurements in a wide temperature range were carried out, and a previously unreported very shallow acceptorlike state was found. We provide evidence that the observed acceptorlike states are relevant to intrinsic point defects.
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