期刊
INTERNATIONAL JOURNAL OF PLASTICITY
卷 40, 期 -, 页码 140-151出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijplas.2012.08.001
关键词
yield condition; crystal plasticity; electron microscopy; mechanical testing
资金
- 7th Framework of the European Union
Micro-pillar compression has been utilised in a novel elevated temperature technique, in situ in the SEM to characterise the plasticity of gallium nitride (GaN) {0001}-oriented euhedral prisms grown by metallorganic vapor phase epitaxy. Electron backscatter diffraction was used to confirm the orientation of the prisms, and deformation was observed to occur via 2nd order pyramidal slip on the (11 (2) over bar2)(11 (2) over bar3) slip system. Analysis of the micro-compression data allowed extraction of fundamental deformation parameters of GaN from 24.5 to 479.3 degrees C. The strain rate sensitivity parameter was determined to be 0.0234 +/- 0.0073 both by constant strain rate micro-compressions and micro-compression strain rate jump tests. The measured activation volume was 3.88 +/- 0.13 x 10(-29) m(3), and the activation energy was 0.9 +/- 0.2 eV. (c) 2012 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据