期刊
INTERNATIONAL JOURNAL OF PHOTOENERGY
卷 2011, 期 -, 页码 -出版社
HINDAWI LTD
DOI: 10.1155/2011/158065
关键词
-
资金
- National Basic Research Program of China [2011CBA00705, 2011CBA00706, 2011CBA00707]
- National High-tech RD Program [2009AA050602]
Indium-doped zinc oxide (IZO) thin films were prepared by low-cost ultrasonic spray pyrolysis (USP). Both a low resistivity (3.13 x 10(-3) Omega cm) and an average direct transmittance (400 similar to 1500 nm) about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV) devices based on poly(3-hexylthiophene) and [6,6]-phenyl C-61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm(-2), a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.
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