期刊
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
卷 10, 期 8-9, 页码 702-725出版社
INDERSCIENCE ENTERPRISES LTD
DOI: 10.1504/IJNT.2013.054212
关键词
ferroelectric polymer; epitaxy; PVDF-TrFE; PTFE; non volatile memory; capacitor
资金
- DAPA
- ADD
- Converging Research Center Program through the Ministry of Education, Science, and Technology [2010K001430]
- National Research Foundation of Korea (NRF)
- Ministry of Science and Technology (MEST), Republic of Korea [R11-2007-050-03001-0, 2009-0080235]
- Second Stage of the Brain Korea 21 Project
This article describes our recent efforts of high throughput epitaxy of thin field-activated electroactive polymer (FEAP) films including poly(vinylidene fluoride) (PVDF), ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) and poly(vinylidene fluorideco-trifluoroethylene-co-chlorofluoroethylene) (PVDF-TrFE-CTFE) for high performance organic electronic device applications. The method is based on development of highly ordered semicrystalline domains of FEAPs on a molecularly ordered poly(tetrafluoroethylene) (PTFE) substrate, combined with spin coating method over the area of a few centimetre square. In general, chain axes of FEAPs were aligned parallel to that of PTFE, i.e., the rubbing direction. More in details, the results for instance in the case of PVDF-TrFE show that the lattice match between (010)(PVDF-TrFE) and (100)(PTFE) results in b and c axis of PVDF-TrFE crystals preferentially parallel to a and c of PTFE, respectively and consequently produces global ordering of the edge-on PVDF-TrFE crystalline lamellae aligned perpendicular to the rubbing direction of PTFE, its c-axis. We also demonstrate that our epitaxially grown FEAP films on PTFE surface were successfully incorporated into various organic electronic devices for high device performance, including non-volatile memory capacitor, metal-ferroelectric-insulator-semiconductor memory element, field effect transistor type memory and high energy storage capacitor.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据