期刊
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
卷 9, 期 3-7, 页码 396-411出版社
INDERSCIENCE ENTERPRISES LTD
DOI: 10.1504/IJNT.2012.045344
关键词
dewetting; strain; stress; SOI; thin films
资金
- ANR [ANR 08-nano-036]
- APO by Provence-Alpes-Cote d'Azur regional Council
In this paper, we present a brief survey of stress effects on dewetting. For this purpose, i we develop a simple thermodynamic model to illustrate stress effects ii we study stress effects in strained-Silicon-On-Insulator (s-SOI) thin films by means of Low Energy Electron Microscopy, and Atomic Force Microscopy iii we discuss some available data. In particular, we show that while for s-SOI the strain only provides a relatively small contribution to the total driving force for dewetting, in some other cases stress can really dominate the driving force for the dewetting.
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