期刊
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
卷 5, 期 4-5, 页码 450-474出版社
INDERSCIENCE ENTERPRISES LTD
DOI: 10.1504/IJNT.2008.017447
关键词
metal oxide nanowires; chemical sensors; catalysis; field effect transistor; spectromicroscopy; surface science
Due to strong interdependence of the electron transport and surface processes in quasi I-D metal oxide nanostructures, chemiresistors and field effect transistors (FETs) based on nanowires perform excellently as sensing elements and may be able to compete with traditional thin film sensors in the field of solid state sensorics. Namely, applications requiring a stable, reproducible sensing element of small size with sensitive performance will benefit from this new platform. In this report, a few recent trends in the fabrication, functionalisation and characterisation of quasi I-D metal oxide nanowire sensors are reviewed.
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