Some recent trends in the fabrication, functionalisation and characterisation of metal oxide nanowire gas sensors

Due to strong interdependence of the electron transport and surface processes in quasi I-D metal oxide nanostructures, chemiresistors and field effect transistors (FETs) based on nanowires perform excellently as sensing elements and may be able to compete with traditional thin film sensors in the field of solid state sensorics. Namely, applications requiring a stable, reproducible sensing element of small size with sensitive performance will benefit from this new platform. In this report, a few recent trends in the fabrication, functionalisation and characterisation of quasi I-D metal oxide nanowire sensors are reviewed.