Plasmon modes in bilayer-graphene-GaAs heterostructures including layer-thickness and exchange-correlation effects

We investigate the dispersion relation and decay rate of plasmon modes in a double-layer system made of bilayer graphene (BLG) and infinite GaAs quantum well at zero-temperature within the generalized random-phase-approximation and taking into account the 2DEG layer-thickness and inhomogeneity of the background dielectric. We illustrate that the acoustic plasmon dispersion curve of the considered system differs significantly from that of monolayer graphene (MLG)-GaAs heterostructure and BLG-GaAs without layer-thickness. Calculations also demonstrate that meanwhile the optical plasmon curve is affected slightly by spacer width and exchange-correlation, the acoustic one depends remarkably on the interlayer distance, inhomogeneity of the background dielectric, carrier densities, spacer dielectric constant, quantum well width and exchange-correlations.