期刊
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
卷 24, 期 15-16, 页码 2297-2301出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0217979210064824
关键词
Band-gap; dielectric constant; size-dependent; Si
Based on the consideration on size-dependent temperature T-m(D) where D denotes the diameter of nanoparticles and nanowires or the thickness of thin films, the size-dependent band-gap Delta E-g(D) and dielectric constant epsilon(D) of low dimensional materials are modeled without any adjustable parameter. The model predicts an increase of the band-gap and a decrease of dielectric constant with drop of Si nanocrystals' size. The predicted results correspond to experimental and computer simulation results of Si nanocrystals.
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