期刊
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
卷 23, 期 12-13, 页码 2938-2942出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S021797920906258X
关键词
Subbands; valley-splitting; metal-insulator transition
We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.
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