期刊
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
卷 23, 期 12-13, 页码 2647-2654出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0217979209062128
关键词
Graphene; Single Electron Transistors; Quantum Dots; Mesoscopic Physics
We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene tunnel barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.
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