期刊
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
卷 38, 期 1, 页码 313-318出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijhydene.2012.10.051
关键词
Hydrogen; Mixture; Palladium; Resistance; Resistivity; Sensor
资金
- National Science Council of the Republic of China [NSC 98-2221-E-019-052-My3, 101-2815-C-006-043-E]
Zigzag-shaped pure-Pd thin film and Pd-SiO2 thin-film mixture as resistive-type hydrogen sensors were deposited on cover-glass substrates through a multiple-boat thermal evaporator. Temperature dependence of the resistance of the pure-Pd resistive-type sensor showed a relative sensitivity of 3.2% at 80 degrees C with a temperature coefficient of the resistance (TCR) of 0.058%/degrees C. Sensing properties of the Pd-SiO2 resistive-type sensor responding to the presence of 1% H-2/N-2 are much better than those of the pure-Pd one, including a higher relative sensitivity (9%-7.7%), a faster response time (10 s-30 s), and a lower detection concentration limit (50 ppm-100 ppm). A higher dissociation rate and a faster diffusion rate due to porous-like properties and more hydrogen atoms caught due to oxygen associated with the Pd-SiO2 thin-film mixture explain why the Pd-SiO2 resistive-type sensor has a higher relative sensitivity with a shorter response time. Copyright (C) 2012, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
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