期刊
MICROELECTRONICS RELIABILITY
卷 55, 期 9-10, 页码 1682-1686出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2015.06.126
关键词
GaN; Power device; Breakdown
The breakdown mechanism of high-voltage GaN-HEMT was analysed using the experimental I-V characteristics and two-dimensional device simulation results. The holes are generated by the impact ionization under high applied voltage. A part of the generated holes accumulates beneath the gate and lowers the gate potential barrier. As a result, the source leakage current flowing over the gate potential increases rapidly and breakdown occurs. From these results, suppression of the impact ionization and the hole remove structure are effective for a highly reliable design concerning the breakdown. (C) 2015 Elsevier Ltd. All rights reserved.
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