期刊
MICROELECTRONICS JOURNAL
卷 46, 期 9, 页码 834-838出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2015.06.019
关键词
Pinched hysteresis; Nonlinear devices; Memristors
Pinched hysteresis is considered to be a signature of the existence of memristance. However, here we report on a model that exhibits pinched hysteresis yet it may represent a nonlinear inductor or a nonlinear capacitor (both with quadratic nonlinearity) or a derivative-controlled nonlinear resistor/transconductor. Further, the lobe area of the pinched hysteresis loop in these devices has inversememristor characteristics; i.e. it is observed to widen rather than decline with increased operating frequency. Experimental results are provided to validate the model. (C) 2015 Elsevier Ltd. All rights reserved.
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