期刊
MICROELECTRONIC ENGINEERING
卷 147, 期 -, 页码 254-259出版社
ELSEVIER
DOI: 10.1016/j.mee.2015.04.065
关键词
Ta2O5; RRAM; Oxygen vacancy; DFT; Diffusion; Switching
资金
- EPSRC
- EPSRC [EP/M009297/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/M009297/1] Funding Source: researchfish
The structure, formation energy and energy levels of the oxygen vacancies in crystalline and amorphous Ta2O5 have been calculated by first principle methods. In the crystalline phase, the 2-fold coordinated intra-layer vacancy is the lowest cost vacancy, and forms a deep level 1.5 eV below the conduction band edge. The 3-fold intra-layer vacancy and the 2-fold inter-layer vacancy are higher cost defects, and form shallower levels. In the amorphous phase, the lower density results in higher concentration of inter-layer like 2-fold O coordination. The O vacancy diffusion barrier is 0.1-0.3 eV in both cases, (C) 2015 Elsevier B.V. All rights reserved.
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