期刊
MICROELECTRONIC ENGINEERING
卷 147, 期 -, 页码 141-144出版社
ELSEVIER
DOI: 10.1016/j.mee.2015.04.073
关键词
Hydroxyl E ' center; SiO2 point defects; Device reliability; DFT; Positively charged E '
资金
- EPSRC [EP/L000202]
- Office of Science and Technology through EPSRC's High End Computing Programme
- EU FP7 project, MORDRED (EU Project) [261868]
- EPSRC [EP/L000202/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/L000202/1, 1523980, 974599] Funding Source: researchfish
We used ab initio calculations to investigate the hole trapping reactions at a neutral defect generated in amorphous silicon dioxide networks by the interaction of strained Si-O bonds with atomic hydrogen, a so-called hydroxyl E' center. It was found that the hole trapping at this defect leads to two distinct charged configurations. The first one consists of an H atom bound to a bridging O in a hydronium-like configuration. The second configuration involves relaxation of a Si atom through the plane of its oxygen neighbors facilitated by a weak interaction with a 2-coordinated O atom. The distribution of total energy differences between these two configurations calculated for a number of amorphous network models has a width of about 1.0 eV. These hole trapping reactions are discussed in the context of Si complementary metal-oxide-semiconductor device reliability issues. (C) 2015 Elsevier B.V. All rights reserved.
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