4.4 Article Proceedings Paper

Hole trapping at hydrogenic defects in amorphous silicon dioxide

期刊

MICROELECTRONIC ENGINEERING
卷 147, 期 -, 页码 141-144

出版社

ELSEVIER
DOI: 10.1016/j.mee.2015.04.073

关键词

Hydroxyl E ' center; SiO2 point defects; Device reliability; DFT; Positively charged E '

资金

  1. EPSRC [EP/L000202]
  2. Office of Science and Technology through EPSRC's High End Computing Programme
  3. EU FP7 project, MORDRED (EU Project) [261868]
  4. EPSRC [EP/L000202/1] Funding Source: UKRI
  5. Engineering and Physical Sciences Research Council [EP/L000202/1, 1523980, 974599] Funding Source: researchfish

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We used ab initio calculations to investigate the hole trapping reactions at a neutral defect generated in amorphous silicon dioxide networks by the interaction of strained Si-O bonds with atomic hydrogen, a so-called hydroxyl E' center. It was found that the hole trapping at this defect leads to two distinct charged configurations. The first one consists of an H atom bound to a bridging O in a hydronium-like configuration. The second configuration involves relaxation of a Si atom through the plane of its oxygen neighbors facilitated by a weak interaction with a 2-coordinated O atom. The distribution of total energy differences between these two configurations calculated for a number of amorphous network models has a width of about 1.0 eV. These hole trapping reactions are discussed in the context of Si complementary metal-oxide-semiconductor device reliability issues. (C) 2015 Elsevier B.V. All rights reserved.

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