期刊
MICROELECTRONIC ENGINEERING
卷 138, 期 -, 页码 111-117出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2015.03.002
关键词
Cylindrical surrounding gate MOSFETs; Ballistic transport; Quantum effect; Quasi-analytical model
资金
- GRF Project of Research Grants Council of Hong Kong [121212]
A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account. (C) 2015 Elsevier B.V. All rights reserved.
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