期刊
MICRO & NANO LETTERS
卷 10, 期 11, 页码 649-652出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/mnl.2015.0047
关键词
pulsed laser deposition; vapour phase epitaxial growth; X-ray photoelectron spectra; graphene; thin films; Raman spectra; transmission electron microscopy; epitaxial growth; graphene thin film; pulsed laser deposition; X-ray photoelectron spectroscopy; XPS; carbon binding energy; Raman spectroscopy; high-resolution transmission electron microscopy; HRTEM; depositing temperature; single oriented crystal domains; temperature 873 K; C
Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp(2)-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.
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