Epitaxial growth of graphene thin film by pulsed laser deposition

Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp(2)-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.