TOWARDS THE IMPLEMENTATION OF MEMRISTOR: A STUDY OF THE ELECTRIC PROPERTIES OF Ba0.77Sr0.23TiO3 MATERIAL

This article reports a recent significant progress towards the implementation of the memristor. In the process, Sr-doped BaTiO3 composite ceramic (thickness 1mm) was prepared by using the solid-state reaction method, whose basic properties (such as phases, microstructure and electric conductivity) were investigated by using XRD (X-ray Diffraction), SEM (Scanning Electron Microscopy) and an impedance analyzer. The electric conductivity of the Ba0.77Sr0.23TiO3 (BST) ceramic shows that: (i) the conductivity of ceramic samples is increased with the increase of DC bias, demonstrating its nonlinear characteristics; (ii) the nonvolatile characteristics of ceramic samples are increased with the decrease of the temperature. Consequently, we conclude that the ceramic sample should have favorable nonvolatile behavior if the sample thickness is in nanoscale and the temperature is decreased to the room temperature. To that end, the current-voltage I-V curves of a BST nanometer film, prepared by sol-gel technique using the spin-coating method, are depicted. The experimental result illustrates its non-ohmic behavior and shows that the I-V curves are hysteretic. Both these indicate that the BST is a memristive system, and the BST monolayer nanometer film has important theoretical significance with a great potential in application to the memristor.