4.5 Review

HODGKIN-HUXLEY AXON IS MADE OF MEMRISTORS

出版社

WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S021812741230011X

关键词

Hodgkin; Huxley; Hodgkin-Huxley Circuit Model; Hodgkin-Huxley Axon; Hodgkin-Huxley Equations; memristive device; memristor; memristance; memductance; squid giant axon; Loligo; pinched hysteresis loop; potassium ion channel; potassium ion-channel memristor; sodium ion channel; sodium ion-channel memristor; time-varying resistance; time-varying conductance

资金

  1. Guggenheim Fellowship
  2. AFOSR [FA9550-10-1-0290]
  3. National Research Foundation of Korea [2010-0006871, 과C6B1618] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This paper presents a rigorous and comprehensive nonlinear circuit-theoretic foundation for the memristive Hodgkin-Huxley Axon Circuit model. We show that the Hodgkin-Huxley Axon comprises a potassium ion-channel memristor and a sodium ion-channel memristor, along with some mundane circuit elements. From this new perspective, many hitherto unresolved anomalous phenomena and paradoxes reported in the literature are explained and clarified. The yet unknown nonlinear dynamical mechanisms which give birth to the action potentials remain hidden within the memristors, and the race is on for uncovering the ultimate truth.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据