期刊
INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS
卷 22, 期 3, 页码 -出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S021812741230011X
关键词
Hodgkin; Huxley; Hodgkin-Huxley Circuit Model; Hodgkin-Huxley Axon; Hodgkin-Huxley Equations; memristive device; memristor; memristance; memductance; squid giant axon; Loligo; pinched hysteresis loop; potassium ion channel; potassium ion-channel memristor; sodium ion channel; sodium ion-channel memristor; time-varying resistance; time-varying conductance
资金
- Guggenheim Fellowship
- AFOSR [FA9550-10-1-0290]
- National Research Foundation of Korea [2010-0006871, 과C6B1618] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This paper presents a rigorous and comprehensive nonlinear circuit-theoretic foundation for the memristive Hodgkin-Huxley Axon Circuit model. We show that the Hodgkin-Huxley Axon comprises a potassium ion-channel memristor and a sodium ion-channel memristor, along with some mundane circuit elements. From this new perspective, many hitherto unresolved anomalous phenomena and paradoxes reported in the literature are explained and clarified. The yet unknown nonlinear dynamical mechanisms which give birth to the action potentials remain hidden within the memristors, and the race is on for uncovering the ultimate truth.
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