期刊
INFRARED PHYSICS & TECHNOLOGY
卷 52, 期 1, 页码 22-24出版社
ELSEVIER
DOI: 10.1016/j.infrared.2008.10.002
关键词
Quantum-dot infrared photodetector; Longwave-infrared (LWIR) sensing and imaging; Low-bias; Large photoresponsivity; High operating temperature
资金
- Raytheon Missile Systems, Tucson, Arizona, 85734 USA
We report on a low-bias InAs-InGaAs quantum-dot (QD) infrared photodetector (QDIP) with operating temperature of 150 K. Longwave-infrared (LWIR) detection at the peak wavelength of 11.7 mu m was achieved. Peak specific photodetectivity D-center dot of 1.7 x 10(9) and 9.0 x 10(7) cm Hz (1/2)/W were obtained at the operating temperature T of 78 K and 150 K, respectively. A large photoresponsivity of 8.3 A/W and high photoconductive gain of 1100 were demonstrated at a low-bias voltage of V = 0.5 V at T = 150 K. The low-bias and high-temperature performance demonstration based on InAs-GaAs material systems indicates that the QDIP technology is promising for LWIR sensing and imaging. (C) 2008 Elsevier B.V. All rights reserved.
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