期刊
MEASUREMENT SCIENCE AND TECHNOLOGY
卷 26, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-0233/26/12/125014
关键词
carrier dynamics; microwave conductivity; free carrier absorption; silicon carbide
The microwave conductance decay (MCD) technique combining an initially matched transmission line setup and picosecond optical excitation was developed and applied for the monitoring of transmitted and reflected microwave power transients in a 4H-SiC epilayer in a wide excitation range, from 2 x 10(14) to 10(18) cm(-3). The excitation-dependent decrease in measurement sensitivity in the power-law relations of the transients was observed at excess carrier densities above 10(16) cm(-3) due to the line mismatches and decrease in the internal microwave field in the illuminated sample. The calibration procedure of MCD data on excess carrier density was applied for the correction of the MCD transients and resulted in nearly identical MCD kinetics in the reflection and transmission. In a 35 mu m-thick n-type 4H-SiC epilayer, the tendencies of the gradual decrease of the initial decay time with an excitation increase and the excitation-enhanced carrier recombination rate in MCD tails were analyzed numerically. These tendencies were attributed to the excitation dependent surface recombination rate and the enhanced trap-related bulk recombination, correspondingly.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据