期刊
IEICE TRANSACTIONS ON ELECTRONICS
卷 E93C, 期 8, 页码 1212-1217出版社
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
DOI: 10.1587/transele.E93.C.1212
关键词
GaN; HEMT; threshold voltage; piezoelectric effects; film stress
Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-HI nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to L-G(-1.1 similar to-1.5) with gate length L-G, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.
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