期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 30, 期 -, 页码 352-360出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2014.10.010
关键词
Thin films; Cerium oxide; Rapid thermal annealing; Heating rate; CAFM; PL
类别
资金
- Region Basse-Normandie
- Syndicat Mixte du Cotentin
- Fonds Europeens de Developpement Regional (FEDER)
The impact of the heating rate (HR) of a Rapid Thermal Annealing (RTA) on the crystallinity and on the morphology of CeO2 thin films has been investigated by Raman Spectroscopy (RS), Photoluminescence (PL), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), and tapping mode Atomic Force Microscopy (PPM). The electrical properties of CeO2 thin films have also been studied with the Conductive AFM mode. This paper highlights the importance of the heating rate value used during an RTA on crystalline quality, morphology and on the electrical properties of the CeO2 layer. In fact, the best crystallinity with a good morphology and a high resistivity has been obtained for a CeO2 layer sputtered on (111) Si substrate and post-annealed at 1000 degrees C for 30s with an HR of 25 degrees C/s. (C) 2014 Elsevier Ltd. All rights reserved.
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