4.7 Article

A study on the geometry of dislocation patterns in the surrounding of nanoindents in a TWIP steel using electron channeling contrast imaging and discrete dislocation dynamics simulations

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.msea.2015.03.078

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Nanoindentation; Dislocations; Electron channeling; Discrete dislocation dynamics (DDD); Dislocation patterning; Plastic zone

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Electron channeling contrast imaging under controlled diffraction conditions (cECCI) enables observation of crystal defects, especially dislocations, stacking faults and nano-twins, close to the surface of bulk samples. In this work cECCI has been employed to observe defects around nanoindents into the surface of {100}-, {110}-, {111}-oriented grains in a Fe-22Mn-0.65C (wt%) TWIP steel sample (fcc crystal structure, stacking fault energy similar to 20 mJ/m(2)) using a cone-spherical indenter. The dislocation patterns show four- and two-fold symmetries for the {100}- and {110}-orientation, and a three-fold symmetry for the (111)-orientation which is, however, difficult to observe. Discrete dislocation dynamics (ODD) simulations of the indentation were carried out to complement the static experimental investigations. The simulations were carried out with both, cross-slip disabled and enabled conditions, where the former were found to match to the experimental results better, as may be expected for an fcc material with low stacking fault energy. The 3-dimensional geometry of the dislocation patterns of the different indents was analysed and discussed with respect to pattern formation mechanisms. The force-displacement curves obtained during indentation showed a stronger strain hardening for the {111} oriented crystal than that for the other orientations. This is in contrast to the behaviour of, for example, copper and is interpreted to be due to planar slip. Irrespective of orientation and indentation depth the radius of the plastically deformed area was found to be approximately 4 times larger than that of the indenter contact area. (C) 2015 Elsevier B.V. All rights reserved.

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