期刊
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
卷 61, 期 2, 页码 364-368出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TUFFC.2014.6722620
关键词
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资金
- Natural Science and Engineering Research Council of Canada
A square lattice of shallow, noncylindrical holes in GaAs is shown to act as a phononic crystal (PnC) reflector. The holes are produced by wet-etching a GaAs substrate using a citric acid: H2O2 etching procedure and a photolitho-graphed array pattern. Although nonuniform and asymmetric etch rates limit the depth and shape of the phononic crystal holes, the matrix acts as a PnC, as demonstrated by insertion loss measurements together with interferometric imaging of surface acoustic waves propagating on the GaAs surface. The measured vertical displacement induced by surface phonons compares favorably with finite-difference time-domain simulations of a PnC with rounded-square holes.
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