期刊
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
卷 57, 期 5, 页码 1029-1033出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TUFFC.2010.1514
关键词
-
BST thin films with various dopants were grown by the sol-gel method on platinized silicon and MgO substrates. Their dielectric properties were investigated at low frequency (up to 1 MHz) on silicon with parallel-plate capacitors and at high frequency (up to 15 GHz) with interdigitated capacitors on MgO substrate. The results depend on the nature of the dopant and show that Mg is a very good candidate to reduce dielectric losses. On the other hand, K is a good candidate as dopant of BST thin film to drastically increase the tunability.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据