期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 29, 期 5, 页码 2393-2407出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2013.2278919
关键词
Electromagnetic compatibility; electromagnetic interference (EMI); insulated gate bipolar transistors (IGBTs); silicon carbide (SiC); variable-speed drives
资金
- EPSRC [EP/K034804/1, EP/K021273/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K021273/1, EP/K034804/1] Funding Source: researchfish
Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to silicon (Si) insulated gate bipolar transistors (IGBTs) paired with fast-recovery diodes. Low-voltage industrial variable-speed drives are a key application for 1200 V devices, and there is great interest in the replacement of the Si IGBTs and diodes that presently dominate in this application with SiC-based devices. However, much of the performance benefit of SiC-based devices is due to their increased switching speeds (di/dt, dv/dt), which raises the issues of increased electromagnetic interference (EMI) generation and detrimental effects on the reliability of inverter-fed electrical machines. In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. While exploiting the full switching-speed capability of SiC-based devices results in significantly increased EMI generation, the all-SiC combination provides a 70% reduction in switching losses relative to all-Si when operated at comparable dv/dt. It is also shown that the loss-EMI tradeoff obtained with the Si-SiC device combination can be significantly improved by driving the IGBT with a modified gate voltage profile.
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