期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 29, 期 5, 页码 2155-2163出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2013.2268900
关键词
BJTs; diodes; GaN; HEMTs; IGBTs; JFETs; MOSFETs; power devices; SiC; thyristors; wide bandgap (WBG) semiconductors
资金
- Spanish Ministry of Science and Innovation [RUECSD2009-00046, TRENCH-SiC TEC2011-22607, THERMOS TEC2008-05577]
- Ramon y Cajal [RYC-2008-03174, RYC-2010-07434]
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.
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