期刊
IEEE TRANSACTIONS ON PLASMA SCIENCE
卷 39, 期 11, 页码 2790-2791出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2011.2157531
关键词
Chemical vapor deposition (CVD) diamond; hot spot; microwave plasma
资金
- DOE/NNSA (CDAC)
- Balzan Foundation
- Deborah Rose Foundation
Plasma-substrate interactions in diamond synthesis via microwave plasma-assisted chemical vapor deposition (CVD) are an important issue in CVD reactor optimization. The hot spot formation observed during single-crystal diamond synthesis in 2.45-GHz cylindrical cavity reactors is examined after long-run deposition.
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