4.3 Article

Advances in High-Voltage Modulators for Applications in Pulsed Power and Plasma-Based Ion Implantation

期刊

IEEE TRANSACTIONS ON PLASMA SCIENCE
卷 39, 期 11, 页码 3033-3044

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2011.2157841

关键词

Beam sources; modulators; plasma-based ion implantation (PBII) and deposition; power supply circuits; pulse generators

资金

  1. Sao Paulo Research Foundation (FAPESP), SP-Brazil

向作者/读者索取更多资源

Modern pulsed power technology has its roots in the late 1950s and early 1960s, and it was driven overwhelmingly by applications in national defense carried out by several countries, especially the U.S., U.K., Russia, and China. The following decades, particularly the early 1990s, witnessed an increased interest in compact systems with pulse repetition rate that could be used in nondefense applications such as treatment of material surfaces by plasma and beam interactions, treatment of pollutants, food sterilization, medical applications, etc. This spawned a new generation of pulsed power components (solid-state switches) that led to completely solid-state modulators. This paper describes how the pulsed power technology used originally in beam sources and cathodic arcs has converged to produce power sources for plasma-based ion implantation (PBII) and related technologies. The present state of the art is reviewed, and prospects for future advances are described, especially for PBII.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据