期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 60, 期 1, 页码 402-407出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2012.2237522
关键词
InGaAs; InP; Al2O3; III-V; MOSFET; radiation; total ionizing dose; X-ray
资金
- National Science Foundation under MRSEC DMR [1119826]
- DTRA under HDTRA [1-10-1-0042, 1-11-1-0023]
We have investigated total ionizing dose (TID) radiation effects in Al2O3-gated ultra-thin body In0.7Ga0.3As MOSFETs. A non-monotonic dependence of the threshold voltage (Vth) on the X-ray radiation dose was observed and analyzed; the accompanying degradation in subthreshold swing (SS) likely is caused by non-uniform trapped charge in the near-interfacial Al2O3 rather than interface-trap generation. The off-current and gate breakdown voltage were independent of dose up to 6 Mrad(SiO2). Compared to the InP-free device, the device with an InP barrier is more vulnerable to TID effects in terms of Vth shift, SS, and mobility degradation.
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