期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 59, 期 1, 页码 167-173出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2011.2175749
关键词
Neutron detector; semiconductor radiation detectors; silicon radiation detectors
资金
- Defense Threat Reduction Agency [DTRA01-02-D-0067]
- National Science Foundation [DE-FG07-04ID14599]
- U.S. Department of Energy under NEER [DE-FG07-04ID14599]
Silicon diodes with large aspect ratio trenched microstructures, backfilled with (LiF)-Li-6, show a dramatic increase in thermal neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology using detector stacking methods to increase thermal neutron detection efficiency, along with the current process to backfill (LiF)-Li-6 into the silicon microstructures. The highest detection efficiency realized thus far is over 42% intrinsic thermal neutron detection efficiency by device-stacking methods. The detectors operate as conformally diffused pn junction diodes each having 1 cm(2) area. Two individual devices were mounted back-to-back with counting electronics coupling the detectors together into a single dual-detector device. The solid-state silicon device was operated at 3 V and utilized simple signal amplification and counting electronic components that have been adjusted from previous work for slow charge integration time. The intrinsic detection efficiency for normal-incident 0.0253 eV neutrons was found by calibrating against a He-3 proportional counter.
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