期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 59, 期 5, 页码 1862-1867出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2012.2201954
关键词
Dark current; donor/acceptor; electron blocking layer; organic photodiode; scintillator; x-ray detection
资金
- Fondazione Cariplo [2010-0564, 2011-0368]
The paper presents an organic-based photodiode coupled to a CsI(Tl) scintillator to realize an X-ray detector. A suitable blend of an indolic squaraine derivative and of fullerene derivative has been used for the photodiode, thus allowing external quantum efficiency in excess of 10% at a wavelength of 570 nm, well matching the scintillator output spectrum. Thanks to the additional deposition of a 15 nm thin layer of a suitable low electron affinity polymer, carriers injection from the metal into the organic semiconductor has been suppressed, and dark current density as low as 1 nA/cm(2) has been obtained, which is comparable to standard Si-based photodiodes. By using a collimated X-ray beam impinging onto the scintillator mounted over the photodiode we have been able to measure current variations in the order of 150 pA on a dark current floor of less than 50 pA when operating the X-ray tube in switching mode, thus proving the feasibility of indirect X-ray detection by means of organic semiconductors.
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