4.5 Article

Characterization of TlBrxCl1-x Crystals for Radiation Detectors

期刊

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 59, 期 4, 页码 1559-1562

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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2012.2200504

关键词

Compound semiconductors; semiconductor radiation detectors; thallium bromide (TlBr)

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Thallium bromide chloride crystals TlBrxCl1-x have been evaluated as a material used for fabrication of room temperature radiation detectors. In this study, TlBrxCl1-x crystals with various chlorine (Cl) concentrations were grown by the travelling molten zone method and the detectors were fabricated from the crystals. The optical properties of the crystals were evaluated by measuring the transmittances. The charge transport properties were characterized by the Hecht analysis. The band gap energy of the crystals proportionally increased with Cl concentration. Mobility-lifetime products (mu tau) of the crystals decreased with increasing Cl concentration.

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