期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 58, 期 6, 页码 2734-2738出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2011.2171504
关键词
AlGaN/GaN HEMTs; heavy ions; radiation damage; single-event effects
It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices.
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