期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 57, 期 6, 页码 3016-3039出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2010.2084101
关键词
Ferroelectric devices; flash memory; magnetoresistive devices; nonvolatile memory; phase change memory; radiation effects
资金
- MIUR [RBIP06YSJJ]
We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.
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