期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 56, 期 4, 页码 1810-1816出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2009.2023478
关键词
Detector; digital x-ray; mercuric iodide; polycrystalline; x-ray; x-ray imaging
资金
- U.S. National Institutes of Health [9R44CA139985, 2R44EB003058, 1R43DE017846]
We have created high-resolution x-ray imaging devices using polycrystalline mercuric iodide (HgI2) films grown directly onto CMOS readout chips using a thermal vapor transport process. Images from prototype 400 x 400 pixel HgI2 coated CMOS readout chips are presented, where the pixel grid is 30 mu m x 30 mu m. The devices exhibited sensitivity of 6.2 mu C/Rcm(2) with corresponding dark current of similar to 2.7 nA/cm(2), and a 80 mu m FWHM planar image response to a 50 mu m slit aperture. X-ray CT images demonstrate a point spread function sufficient to obtain a 50 mu m spatial resolution in reconstructed CT images at a substantially reduced dose compared to phosphor-coated readouts. The use of CMOS technology allows for small pixels (30 mu m), fast readout speeds (8 fps for a 3200 x 3200 pixel array), and future design flexibility due to the use of well-developed fabrication processes.
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