期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 55, 期 6, 页码 3169-3173出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2008.2006478
关键词
Dose rate; enhanced low-dose rate sensitivity; hydrogen; interface traps; radiation effects; total ionizing dose; voltage comparator
资金
- Defense Threat Reduction Agency with NAVSEA Crane and ATK Mission Research [N00164-02-D-6599]
- NASA Electronic Parts Program
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (Radiation Effects in Oxides and Semiconductors).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
