期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 11, 期 3, 页码 581-587出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2012.2186312
关键词
FET; graphene; graphene devices; semiconductor radiation detectors
类别
资金
- Defense Threat Reduction Agency (DTRA)
- U.S. Department of Homeland Security's Domestic Nuclear Detection Office
- U.S. Department of Defense's DTRA
- National Science Foundation, in part by the Department of Homeland Security
- Department of Defense [0833689-ECCS, 2009-DN-077-ARI036-02, HDTRA1-09-1-0047]
- U.S. National Science Foundation Directorate of Engineering
The use of a graphene field-effect transistors (GFETs) to detect radiation is proposed and analyzed. The detection mechanism used in the proposed detector architecture is based on the high sensitivity of graphene to the local change of electric field that can result from the interaction of radiation with a gated undoped semiconductor absorber (substrate) in a GFET. We have modeled a GFET-based radiation detector, and discussed its anticipated performance and potential advantages compared to conventional detector architectures.
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