期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 11, 期 4, 页码 657-660出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2012.2202124
关键词
Ge quantum dot (QD); photonics; thermoelectrics (TE)
类别
资金
- National Science Council of Chinaunder [100-2120-M-008-003, 99-2221-E-008-095-MY3]
We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices.
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