期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 10, 期 1, 页码 92-95出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2010.2062198
关键词
Carrier concentration; InAs; mobility; nanowires (NWs); space-charge-limited (SCL)
类别
资金
- Laboratory Directed Research and Development at Sandia National Laboratories
- United States Department of Energy [DE-AC04-94-AL85000]
Recent theory and experiment have suggested that space-charge-limited (SCL) transport should be prevalent in high aspect ratio semiconducting nanowires (NWs). We report on InAs NWs exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual NWs, both of which are found to be diameter dependent. Intentionally induced failure by Joule heating supports the notion of SCL transport and proposes reduced thermal conductivity due to the NWs' polymorphism.
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