期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 10, 期 2, 页码 344-351出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2010.2041935
关键词
Al2O3; atomic force microscopy (AFM); dielectric breakdown; electrical characterization; high-k
类别
资金
- Spanish Ministry of Science and Innovation [TEC2007-61294/MIC, HA2007-0029]
- Deutscher Akademischer Austausch Dienst
In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.
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