期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 9, 期 5, 页码 582-589出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2010.2053216
关键词
Carbon nanotube (CNT); field-effect transistor; IR detector; optoelectronics
类别
资金
- National Science Foundation [IIS 0713346]
- ONR [N00014-07-1-0935, N00014-04-1-0799]
Carbon nanotube is a promising material to fabricate high-performance nanoscale-optoelectronic devices owing to its unique 1-D structure. In particular, different types of carbon-nanotube-infrared detectors have been developed. However, most previous reported carbon-nanotube-IR detectors showed poor device characteristics due to limited understanding of their working principles. In this paper, three types of IR detectors were fabricated using carbon-nanotube field effect transistors (CNTFETs) to investigate their performance: 1) symmetric Au-CNT-Au CNTFET IR detector; 2) symmetric Ag-CNT-Ag CNTFET IR detector; and 3) asymmetric Ag-CNT-Au CNTFET IR detector. The theoretical analyses and experimental results have shown that the IR detector using an individual single-wall carbon nanotube (SWCNT), with asymmetric Ag-CNT-Au CNTFET structure, can suppress dark current and increase photocurrent by electrostatic doping. As a result, an open-circuit voltage of 0.45 V under IR illumination was generated, which is the highest value reported to date for an individual SWCNT-based photodetector. The results reported in this paper have demonstrated that the CNTFET can be used to develop high-performance IR sensors.
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