期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 8, 期 2, 页码 135-138出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2009.2013620
关键词
CVD; few-layer graphene; graphene devices; graphene synthesis; graphene transfer
类别
资金
- National Science Foundation [CCF-0702204]
The advance of graphene-based nanoelectronics has been hampered due to the difficulty in producing single- or few-layer graphene over large areas. We report a simple, scalable, and cost-efficient method to prepare graphene using methane-based CVD on nickel films deposited over complete Si/SiO2 wafers. By using highly diluted methane, single- and few-layer graphene were obtained, as confirmed by micro-Raman spectroscopy. In addition, a transfer technique has been applied to transfer the graphene film to target substrates via nickel etching. FETs based on the graphene films transferred to Si/SiO2 substrates revealed a weak p-type gate dependence, while transferring of the graphene films to glass substrate allowed its characterization as transparent conductive films, exhibiting transmittance of 80% in the visible wavelength range.
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